SI3455DV datasheet(4/5 Pages) FAIRCHILD

Il numero della parte	SI3455DV

Spiegazioni elettronici	Single P-Channel Logic Level PowerTrench MOSFET

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Produttore elettronici	FAIRCHILD [Fairchild Semiconductor]

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4 / 5 page

Si3455DV Rev A1 (W)

Typical Characteristics

0

2

4

6

8

10

0

1.4

2.8

4.2

5.6

7

Qg, GATE CHARGE (nC)

ID = -3.6A

VDS = -5V

-10V

-15V

0

100

200

300

400

0

6

12

18

24

30

-VDS, DRAIN TO SOURCE VOLTAGE (V)

CISS

COSS

CRSS

f = 1 MHz

VGS = 0 V

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

0.01

0.1

1

10

100

0.1

1

10

100

-VDS, DRAIN-SOURCE VOLTAGE (V)

DC

1s

100ms

100

µs

RDS(ON) LIMIT

VGS = -10V

SINGLE PULSE

RθJA = 156

oC/W

TA = 25

oC

10ms

1ms

10

µs

0

2

4

6

8

10

0.01

0.1

1

10

100

t1, TIME (sec)

SINGLE PULSE

RθJA = 156°C/W

TA = 25°C

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

0.01

0.1

1

0.0001

0.001

0.01

0.1

1

10

100

1000

t1, TIME (sec)

RθJA(t) = r(t) + RθJA

RθJA = 156

oC/W

TJ - TA = P * RθJA(t)

Duty Cycle, D = t1 / t2

P(pk)

t1

t2

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.

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