Motore di ricerca datesheet componenti elettronici
  Italian  ▼
ALLDATASHEETIT.COM

X  

CAT24C256XI-T2 Scheda tecnica(PDF) 2 Page - ON Semiconductor

Il numero della parte CAT24C256XI-T2
Spiegazioni elettronici  256 kb I2C CMOS Serial EEPROM
Download  18 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Produttore elettronici  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

CAT24C256XI-T2 Scheda tecnica(HTML) 2 Page - ON Semiconductor

  CAT24C256XI-T2 Datasheet HTML 1Page - ON Semiconductor CAT24C256XI-T2 Datasheet HTML 2Page - ON Semiconductor CAT24C256XI-T2 Datasheet HTML 3Page - ON Semiconductor CAT24C256XI-T2 Datasheet HTML 4Page - ON Semiconductor CAT24C256XI-T2 Datasheet HTML 5Page - ON Semiconductor CAT24C256XI-T2 Datasheet HTML 6Page - ON Semiconductor CAT24C256XI-T2 Datasheet HTML 7Page - ON Semiconductor CAT24C256XI-T2 Datasheet HTML 8Page - ON Semiconductor CAT24C256XI-T2 Datasheet HTML 9Page - ON Semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 18 page
background image
CAT24C256
http://onsemi.com
2
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Ratings
Units
Storage Temperature
–65 to +150
°C
Voltage on any Pin with Respect to Ground (Note 1)
–0.5 to +6.5
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than VCC + 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than −1.5 V or overshoot to no more than VCC + 1.5 V, for periods of less than 20 ns.
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Symbol
Parameter
Min
Units
NEND (Notes 3, 4)
Endurance
1,000,000
Program/Erase Cycles
TDR
Data Retention
100
Years
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
3. Page Mode, VCC = 5 V, 25°C.
4. The new product revision (E) uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when
a single byte has to be written, 4 bytes (including the ECC bits) are re−programmed. It is recommended to write by multiple of 4 bytes in order
to benefit from the maximum number of write cycles.
Table 3. D.C. OPERATING CHARACTERISTICS − Mature Product (Rev D)
(VCC = 2.5 V to 5.5 V, TA = −40°C to +125°C, and VCC = 1.8 V to 5.5 V, TA = −40°C to +85°C, unless otherwise specified.)
Symbol
Parameter
Test Conditions
Min
Max
Units
ICCR
Read Current
Read, fSCL = 400 kHz
1
mA
ICC
Write Current
Write, fSCL = 400 kHz
3
mA
ISB
Standby Current
All I/O Pins at GND or VCC
TA = −40°C to +85°C
1
mA
TA = −40°C to +125°C
2
IL
I/O Pin Leakage
Pin at GND or VCC
TA = −40°C to +85°C
1
mA
TA = −40°C to +125°C
2
VIL
Input Low Voltage
−0.5
VCC x 0.3
V
VIH
Input High Voltage
VCC x 0.7
VCC + 0.5
V
VOL1
Output Low Voltage
VCC ≥ 2.5 V, IOL = 3.0 mA
0.4
V
VOL2
Output Low Voltage
VCC < 2.5 V, IOL = 1.0 mA
0.2
V
Table 4. PIN IMPEDANCE CHARACTERISTICS − Mature Product (Rev D)
(VCC = 2.5 V to 5.5 V, TA = −40°C to +125°C, and VCC = 1.8 V to 5.5 V, TA = −40°C to +85°C, unless otherwise specified.)
Symbol
Parameter
Conditions
Max
Units
CIN (Note 5)
SDA I/O Pin Capacitance
VIN = 0 V
8
pF
CIN (Note 5)
Input Capacitance (other pins)
VIN = 0 V
6
pF
IWP (Note 6)
WP Input Current
VIN < VIH, VCC = 5.5 V
130
mA
VIN < VIH, VCC = 3.3 V
120
VIN < VIH, VCC = 1.8 V
80
VIN > VIH
1
5. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
6. When not driven, the WP pin is pulled down to GND internally. For improved noise immunity, the internal pull−down is relatively strong;
therefore the external driver must be able to supply the pull−down current when attempting to drive the input HIGH. To conserve power, as
the input level exceeds the trip point of the CMOS input buffer (~ 0.5 x VCC), the strong pull−down reverts to a weak current source. The
variable WP input impedance is available only for Die Rev. C and higher.


Codice articolo simile - CAT24C256XI-T2

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
ON Semiconductor
CAT24C256XI-T2 ONSEMI-CAT24C256XI-T2 Datasheet
187Kb / 14P
   256 kb I2C CMOS Serial EEPROM
November, 2009 ??Rev. 9
CAT24C256XI-T2 ONSEMI-CAT24C256XI-T2 Datasheet
193Kb / 18P
   256 kb I2C CMOS Serial EEPROM
October, 2012 ??Rev. 13
CAT24C256XI-T2 ONSEMI-CAT24C256XI-T2 Datasheet
375Kb / 20P
   EEPROM Serial 256-Kb I2C
May, 2018 ??Rev. 15
More results

Descrizione simile - CAT24C256XI-T2

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
ON Semiconductor
CAT24C256WI-G ONSEMI-CAT24C256WI-G Datasheet
193Kb / 18P
   256 kb I2C CMOS Serial EEPROM
October, 2012 ??Rev. 13
CAT24C256XI ONSEMI-CAT24C256XI Datasheet
205Kb / 18P
   256 kb I2C CMOS Serial EEPROM
January, 2014 ??Rev. 14
CAV24C256WE-GT3 ONSEMI-CAV24C256WE-GT3 Datasheet
157Kb / 11P
   256-Kb I2C CMOS Serial EEPROM
November, 2012 ??Rev. 0
CAT24C256LI ONSEMI-CAT24C256LI Datasheet
193Kb / 18P
   256 kb I2C CMOS Serial EEPROM
October, 2012 ??Rev. 13
CAT24C256YI-G ONSEMI-CAT24C256YI-G Datasheet
205Kb / 18P
   256 kb I2C CMOS Serial EEPROM
January, 2014 ??Rev. 14
CAT24C256 ONSEMI-CAT24C256 Datasheet
187Kb / 14P
   256 kb I2C CMOS Serial EEPROM
November, 2009 ??Rev. 9
logo
Catalyst Semiconductor
CAT24C256 CATALYST-CAT24C256 Datasheet
547Kb / 14P
   256-Kb I2C CMOS Serial EEPROM
logo
ON Semiconductor
CAV24C256 ONSEMI-CAV24C256_18 Datasheet
265Kb / 14P
   EEPROM Serial 256-Kb I2C
May, 2018 ??Rev. 1
CAT24C256 ONSEMI-CAT24C256_18 Datasheet
375Kb / 20P
   EEPROM Serial 256-Kb I2C
May, 2018 ??Rev. 15
CAV24C256 ONSEMI-CAV24C256 Datasheet
157Kb / 11P
   256-Kb CMOS Serial EEPROM
November, 2012 ??Rev. 0
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18


Scheda tecnica Scarica

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEETIT.COM
Lei ha avuto il aiuto da alldatasheet?  [ DONATE ] 

Di alldatasheet   |   Richest di pubblicita   |   contatti   |   Privacy Policy   |   scambio Link   |   Ricerca produttore
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com