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IRF9630 Scheda tecnica(PDF) 7 Page - Kersemi Electronic Co., Ltd. |
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IRF9630 Scheda tecnica(HTML) 7 Page - Kersemi Electronic Co., Ltd. |
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7 / 7 page  7 IRF9630, SiHF9630 Fig. 14 - For P-Channel P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5 % Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current VGS = - 10 V* VDD ISD Driver gate drive D.U.T. ISD waveform D.U.T. VDS waveform Inductor current D = P.W. Period + - - + * V GS = - 5 V for logic level and - 3 V drive devices Peak Diode Recovery dV/dt Test Circuit VDD • dV/dt controlled by R G • ISD controlled by duty factor "D" • D.U.T. - device under test D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer RG Compliment N-Channel of D.U.T. for driver www.kersemi.com |
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