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SB20H150CT-1E3 Scheda tecnica(PDF) 1 Page - Kersemi Electronic Co., Ltd. |
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SB20H150CT-1E3 Scheda tecnica(HTML) 1 Page - Kersemi Electronic Co., Ltd. |
1 / 4 page MBR20H150CT, MBRF20H150CT & SB20H150CT-1 www.kersemi.com 1 Dual Common-Cathode High-Voltage Schottky Rectifier FEATURES • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High frequency operation • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency inverters, freewheeling and polarity protection applications. MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-262AA Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Mounting Torque: 10 in-lbs maximum Polarity: As marked PRIMARY CHARACTERISTICS IF(AV) 2 x 10 A VRRM 150 V IFSM 200 A VF 0.75 V TJ 175 °C ITO-220AB TO-262AA MBR20H150CT MBRF20H150CT SB20H150CT-1 CASE PIN 2 PIN 1 PIN 3 TO-220AB 1 2 3 1 2 3 1 2 3 MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR20H150CT UNIT Maximum repetitive peak reverse voltage VRRM 150 V Working peak reverse voltage VRWM 150 V Maximum DC blocking voltage VDC 150 V Maximum average forward rectified current total device per diode IF(AV) 20 10 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 200 A Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz IRRM 1.0 A Peak non-repetitive reverse surge energy per diode (8/20 µs waveform) ERSM 10 mJ Non-repetitive avalanche energy per diode at 25 °C, IAS = 1.5 A, L = 10 mH EAS 11.25 mJ Voltage rate of change (rated VR) dV/dt 10 000 V/µs Operating junction and storage temperature range TJ, TSTG - 65 to + 175 °C Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min VAC 1500 V |
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