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FQD1N60C Scheda tecnica(PDF) 1 Page - Kersemi Electronic Co., Ltd. |
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FQD1N60C Scheda tecnica(HTML) 1 Page - Kersemi Electronic Co., Ltd. |
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1 / 8 page  FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features • 1A, 600V, RDS(on) = 11.5Ω @VGS = 10 V • Low gate charge ( typical 4.8nC) • Low Crss ( typical 3.5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter FQD1N60C / FQU1N60C Units VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25°C) 1A - Continuous (TC = 100°C) 0.6 A IDM Drain Current - Pulsed (Note 1) 4A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 33 mJ IAR Avalanche Current (Note 1) 1A EAR Repetitive Avalanche Energy (Note 1) 2.8 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TA = 25°C)* 2.5 W Power Dissipation (TC = 25°C) 28 W - Derate above 25°C 0.22 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 4.53 °C/W RθJA Thermal Resistance, Junction-to-Ambient* -- 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 110 °C/W ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ! ! ! ! ! ! ! ! ! ! ! ! ◀ ◀ ◀ ◀ ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ! ! ! ! ! ! ! ! ! ! ! ! ◀ ◀ ◀ ◀ S D G I-PAK FQU Series D-PAK FQD Series GS D GS D These N-Channel enhancement mode power field effect transistors are produced using Corise Semiconductorÿs proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. |
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