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SI4190DY-T1-GE3 Scheda tecnica(PDF) 3 Page - Vishay Siliconix |
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SI4190DY-T1-GE3 Scheda tecnica(HTML) 3 Page - Vishay Siliconix |
3 / 10 page Document Number: 66595 S10-2686-Rev. C, 22-Nov-10 www.vishay.com 3 Vishay Siliconix Si4190DY New Product TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 14 28 42 56 70 0 1234 5 V GS =10Vthru 4V V GS =3V V DS - Drain-to-Source Voltage (V) 0.006 0.007 0.008 0.009 0.010 0.011 0 14284256 70 V GS =10V V GS =4.5 V I D - Drain Current (A) 0 2 4 6 8 10 0 8 16 24 32 40 I D = 10 A V DS = 25 V V DS = 75 V V DS = 50 V Q g - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 2 4 6 8 10 0 1234 5 T C = 25 °C T C = 125 °C T C = - 55 °C V GS - Gate-to-Source Voltage (V) 0 700 1400 2100 2800 3500 0 20406080 100 C iss C oss C rss V DS - Drain-to-Source Voltage (V) 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 I D = 15 A V GS = 10 V V GS = 4.5 V T J - Junction Temperature (°C) |
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