Motore di ricerca datesheet componenti elettronici |
|
SI7483ADP-T1-E3 Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
|
SI7483ADP-T1-E3 Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com 2 Document Number: 73025 S09-0270-Rev. C, 16-Feb-09 Vishay Siliconix Si7483ADP Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.0 - 3.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V - 1 µA VDS = - 30 V, VGS = 0 V, TJ = 70 °C - 10 On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 10 V - 30 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 24 A 0.0047 0.0057 Ω VGS = - 4.5 V, ID = - 17 A 0.0075 0.0095 Forward Transconductancea gfs VDS = - 15 V, ID = - 24 A 70 S Diode Forward Voltagea VSD IS = - 2.9 A, VGS = 0 V - 0.73 - 1.1 V Dynamicb Total Gate Charge Qg VDS = - 15 V, VGS = - 10 V, ID = - 24 A 120 180 nC Gate-Source Charge Qgs 18 Gate-Drain Charge Qgd 33 Gate Resistance Rg 1.6 3.2 4.8 Ω Turn-On Delay Time td(on) VDD = - 15 V, RL = 15 Ω ID ≅ - 1.0 A, VGEN = - 10 V, Rg = 6 Ω 22 35 ns Rise Time tr 33 50 Turn-Off Delay Time td(off) 210 320 Fall Time tf 130 200 Source-Drain Reverse Recovery Time trr IF = - 2.9 A, dI/dt = 100 A/µs 70 130 Output Characteristics 0 10 20 30 40 50 60 0 1234 5 VGS = 10 V thru 4 V VDS - Drain-to-Source Voltage (V) 3 V Transfer Characteristics 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 25 °C TC = 125 °C - 55 °C VGS - Gate-to-Source Voltage (V) |
Codice articolo simile - SI7483ADP-T1-E3 |
|
Descrizione simile - SI7483ADP-T1-E3 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEETIT.COM |
Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |