Motore di ricerca datesheet componenti elettronici
  Italian  ▼
ALLDATASHEETIT.COM

X  

SI7483ADP-T1-E3 Scheda tecnica(PDF) 2 Page - Vishay Siliconix

Il numero della parte SI7483ADP-T1-E3
Spiegazioni elettronici  P-Channel 30-V (D-S) MOSFET
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Produttore elettronici  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI7483ADP-T1-E3 Scheda tecnica(HTML) 2 Page - Vishay Siliconix

  SI7483ADP-T1-E3 Datasheet HTML 1Page - Vishay Siliconix SI7483ADP-T1-E3 Datasheet HTML 2Page - Vishay Siliconix SI7483ADP-T1-E3 Datasheet HTML 3Page - Vishay Siliconix SI7483ADP-T1-E3 Datasheet HTML 4Page - Vishay Siliconix SI7483ADP-T1-E3 Datasheet HTML 5Page - Vishay Siliconix SI7483ADP-T1-E3 Datasheet HTML 6Page - Vishay Siliconix SI7483ADP-T1-E3 Datasheet HTML 7Page - Vishay Siliconix SI7483ADP-T1-E3 Datasheet HTML 8Page - Vishay Siliconix  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
www.vishay.com
2
Document Number: 73025
S09-0270-Rev. C, 16-Feb-09
Vishay Siliconix
Si7483ADP
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 1.0
- 3.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 30 V, VGS = 0 V
- 1
µA
VDS = - 30 V, VGS = 0 V, TJ = 70 °C
- 10
On-State Drain Currenta
ID(on)
VDS = - 5 V, VGS = - 10 V
- 30
A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V, ID = - 24 A
0.0047
0.0057
Ω
VGS = - 4.5 V, ID = - 17 A
0.0075
0.0095
Forward Transconductancea
gfs
VDS = - 15 V, ID = - 24 A
70
S
Diode Forward Voltagea
VSD
IS = - 2.9 A, VGS = 0 V
- 0.73
- 1.1
V
Dynamicb
Total Gate Charge
Qg
VDS = - 15 V, VGS = - 10 V, ID = - 24 A
120
180
nC
Gate-Source Charge
Qgs
18
Gate-Drain Charge
Qgd
33
Gate Resistance
Rg
1.6
3.2
4.8
Ω
Turn-On Delay Time
td(on)
VDD = - 15 V, RL = 15 Ω
ID ≅ - 1.0 A, VGEN = - 10 V, Rg = 6 Ω
22
35
ns
Rise Time
tr
33
50
Turn-Off Delay Time
td(off)
210
320
Fall Time
tf
130
200
Source-Drain Reverse Recovery Time
trr
IF = - 2.9 A, dI/dt = 100 A/µs
70
130
Output Characteristics
0
10
20
30
40
50
60
0
1234
5
VGS = 10 V thru 4 V
VDS - Drain-to-Source Voltage (V)
3 V
Transfer Characteristics
0
10
20
30
40
50
60
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
25 °C
TC = 125 °C
- 55 °C
VGS - Gate-to-Source Voltage (V)


Codice articolo simile - SI7483ADP-T1-E3

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
VBsemi Electronics Co.,...
SI7483ADP-T1-GE3 VBSEMI-SI7483ADP-T1-GE3 Datasheet
1Mb / 8P
   P-Channel 30-V (D-S) MOSFET
More results

Descrizione simile - SI7483ADP-T1-E3

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
Vishay Siliconix
SI2341DS VISHAY-SI2341DS Datasheet
43Kb / 5P
   P-Channel 30-V (D-S) MOSFET
Rev. B, 11-Aug-03
SI4835BDY VISHAY-SI4835BDY_05 Datasheet
90Kb / 6P
   P-Channel 30-V (D-S) MOSFET
Rev. D, 25-Oct-0
logo
Anachip Corp
AF4407 ANACHIP-AF4407 Datasheet
263Kb / 5P
   P-Channel 30-V (D-S) MOSFET
logo
Vishay Siliconix
SI7423DN VISHAY-SI7423DN Datasheet
173Kb / 3P
   P-Channel 30-V (D-S) MOSFET
24-May-04
SI2303ADS VISHAY-SI2303ADS Datasheet
39Kb / 4P
   P-Channel, 30-V (D-S) MOSFET
Rev. B, 29-Apr-02
SI3481DV VISHAY-SI3481DV Datasheet
67Kb / 5P
   P-Channel 30-V (D-S) MOSFET
Rev. B, 16-Feb-04
logo
DinTek Semiconductor Co...
DTM4415 DINTEK-DTM4415 Datasheet
286Kb / 9P
   P-Channel 30-V (D-S) MOSFET
logo
Vishay Siliconix
SI4435DDY-T1-GE3 VISHAY-SI4435DDY-T1-GE3 Datasheet
279Kb / 10P
   P-Channel 30-V (D-S) MOSFET
Rev. C, 18-May-09
SI7121DN VISHAY-SI7121DN Datasheet
552Kb / 13P
   P-Channel 30-V (D-S) MOSFET
Rev. C, 23-Jun-08
SI4825DDY-T1 VISHAY-SI4825DDY-T1 Datasheet
242Kb / 10P
   P-Channel 30-V (D-S) MOSFET
Rev. A, 13-Oct-08
SI7129DN VISHAY-SI7129DN Datasheet
566Kb / 13P
   P-Channel 30 V (D-S) MOSFET
Rev. B, 06-Sep-10
More results


Html Pages

1 2 3 4 5 6 7 8


Scheda tecnica Scarica

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEETIT.COM
Lei ha avuto il aiuto da alldatasheet?  [ DONATE ] 

Di alldatasheet   |   Richest di pubblicita   |   contatti   |   Privacy Policy   |   scambio Link   |   Ricerca produttore
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com