SI7483ADP-T1-E3 datasheet(1/8 Pages) VISHAY

Il numero della parte	SI7483ADP-T1-E3

Spiegazioni elettronici	P-Channel 30-V (D-S) MOSFET

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Produttore elettronici	VISHAY [Vishay Siliconix]

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Vishay Siliconix

Si7483ADP

Document Number: 73025

S09-0270-Rev. C, 16-Feb-09

www.vishay.com

1

P-Channel 30-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Available

•

TrenchFET® Power MOSFETS

•

New Low Thermal Resistance PowerPAK®

Package with Low 1.07 mm Profile

•

100 % Rg tested

APPLICATIONS

•

Battery and Load Switching

- Notebook Computers

- Notebook Battery Packs

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

30

0.0057 at VGS = - 10 V

- 24

0.0095 at VGS = - 4.5 V

- 17

1

2

3

4

5

6

7

8

S

G

D

6.15 mm

5.15 mm

PowerPAK SO-8

Bottom View

Ordering Information: Si7483ADP-T1-E3 (Lead (Pb)-free)

Si7483ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)

S

G

D

P-Channel MOSFET

Notes

a.

Surface Mounted on 1" x 1" FR4 board.

b.

See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

c.

Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

Unit

Drain-Source Voltage

VDS

- 30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

a

TA = 25 °C

ID

- 24

- 14

A

TA = 70 °C

- 19

- 11

Pulsed Drain Current

IDM

- 60

Continuous Source Current (Diode Conduction)a

IS

- 4.5

- 1.6

Maximum Power Dissipationa

TA = 25 °C

PD

5.4

1.9

W

TA = 70 °C

3.4

1.2

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)b,c

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta

t

≤ 10 s

RthJA

18

23

°C/W

Steady State

50

65

Maximum Junction-to-Case (Drain)

Steady State

RthJC

1.0

1.5

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