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NZT660 Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor

Il numero della parte NZT660
Spiegazioni elettronici  PNP Low Saturation Transistor
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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July 1998
NZT660 / NZT660A
PNP Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A
continuous.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
°C
-55 to +150
Operating and Storage Junction Temperature Range
TJ, Tstg
A
3
Collector Current - Continuous
IC
V
5
Emitter-Base Voltage
VEBO
V
80
Collector-Base Voltage
VCBO
V
60
Collector-Emitter Voltage
VCEO
Units
NZT660/NZT660A
Parameter
Symbol
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
°C/W
62.5
Thermal Resistance, Junction to Ambient
RθJA
W
2
Total Device Dissipation
PD
NZT660/NZT660A
Units
Max
Characteristic
Symbol
Nzt660.lwpPrPA 7/10/98 revC
C
E
C
B
SOT-223
© 1998 Fairchild Semiconductor Corporation


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