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NZT651 Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
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NZT651 Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
2 / 4 page Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS ON CHARACTERISTICS* Symbol Parameter Test Conditions Min Max Units hFE DC Current Gain IC = 50 mA, VCE = 2.0 V IC = 500 mA, VCE = 2.0 V IC = 1.0 A, VCE = 2.0 V IC = 2.0 A, VCE = 2.0 V 75 75 75 40 VCE(sat) Collector-Emitter Saturation Voltage IC = 1.0 A, IB = 100 mA IC = 2.0 A, IB = 200 mA 0.3 0.5 V V VBE(sat) Base-Emitter Saturation Voltage IC = 1.0 A, IB = 100 mA 1.2 V VBE(on) Base-Emitter On Voltage IC = 1.0 A, VCE = 2.0 V 1.0 V SMALL SIGNAL CHARACTERISTICS DC Typical Characteristics V(BR)CEO Collector-Emitter Sustaining Voltage IC = 10 mA, IB = 060V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 µA, I E = 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 µA, IC = 0 5.0 V ICBO Collector-Cutoff Current VCB = 80 V, IE = 0 100 nA IEBO Emitter-Cutoff Current VEB = 4.0 V, IC = 0 0.1 µA fT Current Gain - Bandwidth Product IC = 50 mA, VCE = 5.0 V, f = 100 MHz 75 MHz *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Typical Pulsed Current Gain vs Collector Current 0.01 0.1 1 10 0 50 100 150 200 I - COLLECTOR CURRENT (A) - 40 ºC 25 °C C V = 5V CE 125 °C Collector-Emitter Saturation Voltage vs Collector Current P4P 0.01 0.1 1 10 0 0.5 1 1.5 2 2.5 3 I - COLLECTOR CURRENT (A) C ββ = 10 - 40 ºC 25 °C 125 °C NPN Current Driver Transistor (continued) |
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