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NZT651 Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor

Il numero della parte NZT651
Spiegazioni elettronici  NPN Current Driver Transistor
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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NZT651
NPN Current Driver Transistor
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
60
V
VCBO
Collector-Base Voltage
80
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current - Continuous
4.0
A
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Symbol
Characteristic
Max
Units
*NZT651
PD
Total Device Dissipation
Derate above 25
°C
1.2
9.7
W
mW/
°C
RθJA
Thermal Resistance, Junction to Ambient
103
°C/W
B
C
C
SOT-223
E
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
This device is designed for power amplifier, regulator and switching
circuits where speed is important. Sourced from Process 4P.
Discrete POWER & Signal
Technologies
© 1997 Fairchild Semiconductor Corporation


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