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MJE4353 Scheda tecnica(PDF) 3 Page - ON Semiconductor

Il numero della parte MJE4353
Spiegazioni elettronici  High-Voltage - High Power Transistors
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Produttore elettronici  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MJE4353 Scheda tecnica(HTML) 3 Page - ON Semiconductor

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MJE4343 (NPN), MJE4353 (PNP)
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 200 mAdc, IB = 0)
VCEO(sus)
160
Vdc
Collector−Emitter Cutoff Current
(VCE = 80 Vdc, IB = 0)
ICEO
750
mAdc
Collector−Emitter Cutoff Current
(VCE = Rated VCB, VEB(off) = 1.5 Vdc)
(VCE = Rated VCB, VEB(off) = 1.5 Vdc, TC = 150°C)
ICEX
1.0
5.0
mAdc
Collector−Base Cutoff Current
(VCB = Rated VCB, IE = 0)
ICBO
750
mAdc
Emitter−Base Cutoff Current
(VBE = 7.0 Vdc, IC = 0)
IEBO
1.0
mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 8.0 Adc, VCE = 2.0 Vdc)
(IC = 16 Adc, VCE = 4.0 Vdc)
hFE
15
8.0
35 (Typ)
15 (Typ)
Collector−Emitter Saturation Voltage
(IC = 8.0 Adc, IB = 800 mA)
(IC = 16 Adc, IB = 2.0 Adc)
VCE(sat)
2.0
3.5
Vdc
Base−Emitter Saturation Voltage
(IC = 16 Adc, IB = 2.0 Adc)
VBE(sat)
3.9
Vdc
Base−Emitter On Voltage
(IC = 16 Adc, VCE = 4.0 Vdc)
VBE(on)
3.9
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 3)
(IC = 1.0 Adc, VCE = 20 Vdc, ftest = 0.5 MHz)
fT
1.0
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
800
pF
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle w 2.0%.
3. fT = ⎪hfe⎪• ftest.


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