2SD1628

No.1781-2/6

Continued from preceding page.

Parameter

Symbol

Conditions

Ratings

Unit

Collector Dissipation

PC

500

mW

1.5

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Collector Cutoff Current

ICBO

VCB=50V, IE=0A

100

nA

Emitter Cutoff Current

IEBO

VEB=5V, IC=0A

100

nA

DC Current Gain

hFE1VCE=2V, IC=0.5A

120*

560*

hFE2VCE=2V, IC=3A

95

Gain-Bandwidth Product

fT

VCE=10V, IC=50mA

120

MHz

Output Capacitance

Cob

VCB=10V, f=1MHz

45

pF

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=3A, IB=60mA

500

mV

Base-to-Emitter Saturation Voltage

VBE(sat)

IC=3A, IB=60mA

1.5

V

Turn-ON Time

ton

See specified Test Circuit.

30

ns

Storage Time

tstg

300

ns

Fall Time

tf

40

ns

* : The 2SD1628 is classified by 0.5A hFE as follows :

Rank

E

F

G

hFE

120 to 200

160 to 320

280 to 560

Switching Time Test Circuit

Ordering Information

Device

Package

Shipping

memo

2SD1628G-TD-E

PCP

1,000pcs./reel

Pb Free

2SD1628G-TD-H

PCP

1,000pcs./reel

Pb Free and Halogen Free

2SD1628F-TD-E

PCP

1,000pcs./reel

Pb Free

2SD1628F-TD-H

PCP

1,000pcs./reel

Pb Free and Halogen Free

IC -- VCE

Collector-to-Emitter Current, VCE -- V

IC -- VCE

Collector-to-Emitter Voltage, VCE -- V

5

4

3

2

1

0

0

0.2

0.4

0.8

0.6

1.0

ITR10003

IB=0

5mA

10mA

15mA

20mA

30mA

40mA

60mA

2.0

1.6

1.2

0.8

0.4

0

0

0.4

0.8

1.6

1.2

2.0

ITR10004

IB=0

2mA

4mA

6mA

8mA

pulse

pulse

200VR

1Ω

5Ω

1μF

1μF

PW=10μs

D.C.=2%

tr, tf ≤ 7ms

IC=10IB1= --10IB2=2A

VBE= --5V

50Ω

INPUT

OUTPUT

IB1

IB2

VCC=10V

+

+

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.