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IRF2807Z Scheda tecnica(PDF) 4 Page - Kersemi Electronic Co., Ltd.

Il numero della parte IRF2807Z
Spiegazioni elettronici  AUTOMOTIVE MOSFET Advanced Process Technology
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Produttore elettronici  KERSEMI [Kersemi Electronic Co., Ltd.]
Homepage  http://www.kersemi.com
Logo KERSEMI - Kersemi Electronic Co., Ltd.

IRF2807Z Scheda tecnica(HTML) 4 Page - Kersemi Electronic Co., Ltd.

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IRF2807Z/S/L
4
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0
1020304050
607080
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
VDS= 60V
VDS= 38V
VDS= 15V
ID= 53A
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD, Source-to-Drain Voltage (V)
0
1
10
100
1000
TJ = 25°C
TJ = 175°C
VGS = 0V
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
10000
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
Tc = 25°C
Tj = 175°C
Single Pulse
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