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CSD19531Q5A Scheda tecnica(PDF) 2 Page - Texas Instruments |
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CSD19531Q5A Scheda tecnica(HTML) 2 Page - Texas Instruments |
2 / 12 page CSD19531Q5A SLPS406A – SEPTEMBER 2013 – REVISED JANUARY 2014 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Electrical Characteristics (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 250 μA 100 V IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 80 V 1 μA IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 20 V 100 nA VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA 2.2 2.7 3.3 V VGS = 6 V, ID = 16 A 6.0 7.8 m Ω RDS(on) Drain-to-Source On Resistance VGS = 10 V, ID = 16 A 5.3 6.4 m Ω gfs Transconductance VDS = 10 V, ID = 16 A 82 S Dynamic Characteristics Ciss Input Capacitance 2980 3870 pF Coss Output Capacitance VGS = 0 V, VDS = 50 V, f = 1 MHz 560 728 pF Crss Reverse Transfer Capacitance 13.0 16.9 pF RG Series Gate Resistance 1.3 2.6 Ω Qg Gate Charge Total (10 V) 37 48 nC Qgd Gate Charge Gate to Drain 6.6 nC VDS = 50 V, ID = 16 A Qgs Gate Charge Gate to Source 10.5 nC Qg(th) Gate Charge at Vth 7.3 nC Qoss Output Charge VDS = 50 V, VGS = 0 V 97 nC td(on) Turn On Delay Time 6.0 ns tr Rise Time 5.8 ns VDS = 50 V, VGS = 10 V, IDS = 16 A, RG = 0 Ω td(off) Turn Off Delay Time 18.4 ns tf Fall Time 5.2 ns Diode Characteristics VSD Diode Forward Voltage ISD = 16 A, VGS = 0 V 0.8 1 V Qrr Reverse Recovery Charge 226 nC VDS= 50 V, IF = 16 A, di/dt = 300 A/ μs trr Reverse Recovery Time 148 ns Thermal Characteristics (TA = 25°C unless otherwise stated) PARAMETER MIN TYP MAX UNIT RθJC Thermal Resistance Junction to Case(1) 1 °C/W RθJA Thermal Resistance Junction to Ambient(1)(2) 50 °C/W (1) RθJC is determined with the device mounted on a 1-inch 2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design. (2) Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu. 2 Submit Documentation Feedback Copyright © 2013–2014, Texas Instruments Incorporated Product Folder Links: CSD19531Q5A |
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