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TLP700 Scheda tecnica(PDF) 1 Page - Toshiba Semiconductor |
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TLP700 Scheda tecnica(HTML) 1 Page - Toshiba Semiconductor |
1 / 17 page TLP700 2010-02-23 1 Unit in mm Weight: 0.26 g (t yp.) 4.58±0.25 9.7±0.3 0.4±0.1 1.27±0.2 1.25±0.25 7.62±0.25 1 2 3 6 5 4 11-5J1 TOSHIBA 11-5J1 TOSHIBA Photocoupler GaAℓAs IRED + Photo IC TLP700 Industrial inverters Inverter for air conditioners IGBT/Power MOSFET gate drive TLP700 consists of a GaAℓAs light-emitting diode and an integrated photodetector. This unit is 6-lead SDIP package. The TLP700 is 50% smaller than the 8-pin DIP and meets the reinforced insulation class requirements of international safety standards. Therefore the mounting area can be reduced in equipment requiring safety standard certification. The TLP700 is suitable for gate driving circuits for IGBTs or power MOSFETs. In particular, the TLP700 is capable of “direct” gate driving of low-power IGBTs. • Peak output current: ±2.0 A (max) • Guaranteed performance over temperature: −40 to 100°C • Supply current: 2 mA (max) • Power supply voltage: 15 to 30 V • Threshold input current: IFLH = 5 mA (max) • Switching time (tpLH / tpHL): 500 ns (max) • Common mode transient immunity: ±15 kV/μs (min) • Isolation voltage: 5000 Vrms (min) • Construction mechanical rating 7.62-mm pitch standard type 10.16-mm pitch TLPXXXF type Creepage Distance Clearance Insulation Thickness 7.0 mm (min) 7.0 mm (min) 0.4 mm (min) 8.0 mm (min) 8.0 mm (min) 0.4 mm (min) • UL recognized: UL1577, File No. E67349 • Option (D4) type TÜV approved: EN60747-5-2 Maximum operating insulation voltage: 890 Vpk Highest permissible over voltage: 8000 Vpk ( Note ) When a EN60747-5-2 approved type is needed, please designate the “Option(D4)” Truth Table Input LED M1 M2 Output H ON ON OFF H L OFF OFF ON L 1: ANODE 2: N.C 3: CATHODE 4: GND 5: VO ( OUTPUT ) 6: VCC 1 3 4 5 6 2 SHIELD Pin Configuration (Top View) A 0.1- μF bypass capacitor must be connected between pins 6 and 4. (See Note 6.) Schematic VCC GND ICC (M1) (M2) IO IF 1+ 4 5 6 VO VF 3- SHIELD |
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