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MMBTH11 Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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MMBTH11 Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers. Sourced from Process 47. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current - Continuous 50 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units MPSH11 *MMBTH11 PD Total Device Dissipation Derate above 25 °C 350 2.8 225 1.8 mW mW/ °C RθJC Thermal Resistance, Junction to Case 125 °C/W RθJA Thermal Resistance, Junction to Ambient 357 556 °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." MPSH11 C B E TO-92 MMBTH11 C B E SOT-23 Mark: 3G Discrete POWER & Signal Technologies ©1997 Fairchild Semiconductor Corporation |
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