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SI3210-GT Scheda tecnica(PDF) 3 Page - Silicon Laboratories

Il numero della parte SI3210-GT
Spiegazioni elettronici  Perfroms all BORSCHT functions DC-DC controller provides tracking battery fromm a 3.3-35V input
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Produttore elettronici  SILABS [Silicon Laboratories]
Homepage  http://www.silabs.com
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SI3210-GT Scheda tecnica(HTML) 3 Page - Silicon Laboratories

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Si3210/Si3211
Rev. 1.61
3
1. Electrical Specifications
Table 1. Absolute Maximum Ratings and Thermal Information
1
Parameter
Symbol
Value
Unit
Si3210/11
DC Supply Voltage
VDDD, VDDA1, VDDA2
–0.5 to 6.0
V
Input Current, Digital Input Pins
IIN
±10
mA
Digital Input Voltage
VIND
–0.3 to (VDDD +0.3)
V
Operating Temperature Range2
TA
–40 to 100
C
Storage Temperature Range
TSTG
–40 to 150
C
TSSOP-38 Thermal Resistance, Typical
JA
70
C/W
QFN-38 Thermal Resistance, Typical
JA
35
C/W
Continuous Power Dissipation2
PD
0.7
W
Si3201
DC Supply Voltage
VDD
–0.5 to 6.0
V
Battery Supply Voltage
VBAT
–104
V
Input Voltage: TIP, RING, SRINGE, STIPE pins
VINHV
(VBAT – 0.3) to (VDD + 0.3)
V
Input Voltage: ITIPP, ITIPN, IRINGP, IRINGN pins
VIN
–0.3 to (VDD + 0.3)
V
Operating Temperature Range2
TA
–40 to 100
C
Storage Temperature Range
TSTG
–40 to 150
C
SOIC-16 Thermal Resistance, Typical3
JA
55
C/W
Continuous Power Dissipation2
PD
0.8 at 70 °C
W
0.6 at 85 °C
Notes:
1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be
restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2. Operation above 125 °C junction temperature may degrade device reliability.
3. Thermal resistance assumes a multi-layer PCB with the exposed pad soldered to a topside PCB pad.


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