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2SD1306NETL-H Scheda tecnica(PDF) 2 Page - Renesas Technology Corp |
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2SD1306NETL-H Scheda tecnica(HTML) 2 Page - Renesas Technology Corp |
2 / 7 page 2SD1306 Preliminary R07DS0280EJ0300 Rev.3.00 Page 2 of 5 Mar 28, 2011 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 30 — — V IC = 10 μA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 15 — — V IC = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 — — V IE = 10 μA, IC = 0 Collector cutoff current ICBO — — 1.0 μA VCB = 20 V, IE = 0 DC current transfer ratio hFE* 1 250 — 800 VCE = 1 V, IC = 150 mA* 2 Base to emitter voltage VBE — — 1.0 V VCE = 1 V, IC = 150 mA* 2 Collector to emitter saturation voltage VCE(sat) — — 0.5 V IC = 500 mA, IB = 50 mA* 2 Gain bandwidth product fT — 250 — MHz VCE = 1 V, IC = 150 mA* 2 Notes: 1. The 2SD1306 is grouped by hFE as follows. 2. Pulse test Grade D E Mark ND NE hFE 250 to 500 400 to 800 |
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