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2SC4702XV-TR-E Scheda tecnica(PDF) 1 Page - Renesas Technology Corp |
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2SC4702XV-TR-E Scheda tecnica(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page R07DS0275EJ0400 Rev.4.00 Page 1 of 5 Mar 28, 2011 Preliminary Datasheet 2SC4702 Silicon NPN Epitaxial Application High voltage amplifier Features • High breakdown voltage VCEO = 300 V • Small Cob Cob = 1.5 pF Typ. Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1 2 3 1. Emitter 2. Base 3. Collector Note: Marking is “XV–”. Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VEBO 5 V Collector current IC 50 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C R07DS0275EJ0400 (Previous: REJ03G0729-0300) Rev.4.00 Mar 28, 2011 |
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