Motore di ricerca datesheet componenti elettronici |
|
STB80NF06T4 Scheda tecnica(PDF) 5 Page - STMicroelectronics |
|
STB80NF06T4 Scheda tecnica(HTML) 5 Page - STMicroelectronics |
5 / 14 page STP80NF06 - STB80NF06 - STW80NF06 Electrical characteristics 5/14 Table 6. Source drain diode Symbol Parameter Test conditions Min. Typ. Max Unit ISD Source-drain current 80 A ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current (pulsed) 320 A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 80A, VGS = 0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80A, VDD = 50V di/dt = 100A/µs, Tj = 150°C (see Figure 15) 80 250 6.4 ns nC A |
Codice articolo simile - STB80NF06T4 |
|
Descrizione simile - STB80NF06T4 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEETIT.COM |
Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |