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MJE800 Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
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MJE800 Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
2 / 4 page ©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001 Typical Characteristics Figure 1. Static Characteristic Figure 2. DC current Gain Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance Figure 5. Safe Operating Area Figure 6. Power Derating 0 1234 5 0 1 2 3 4 5 IB= 350 µA IB= 400 µA IB= 450 µA IB= 500µ A IB= 300µA IB= 250µA IB= 200µA IB= 150 µA IB= 100 µA IB= 50 µA VCE(V),COLLECTOR-EMITTER VOLTAGE 0.01 0.1 1 10 10 100 1000 10000 VCE = 3V IC[A], COLLECTOR CURRENT 0.01 0.1 1 10 0.1 1 10 100 IC = 500 IB VCE(sat) VBE(sat) IC[A], COLLECTOR CURRENT 0.01 0.1 1 10 100 1 10 100 1000 f=0.1MHZ IE=0 VCB[V], COLLECTOR-BASE VOLTAGE 1 10 100 1000 0.1 1 10 100 MJE802/803 MJE800/801 VCE[V], COLLECTOR-EMITTER VOLTAGE 0 25 50 75 100 125 150 175 0 10 20 30 40 50 60 TC[ o C], CASE TEMPERATURE |
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