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FQD2N60CTF Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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FQD2N60CTF Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
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1 / 9 page  1 www.fairchildsemi.com ©200 9 Fairchild Semiconductor Corporation FQD2N60C / FQU2N60C Rev. C0 FQD2N60C / FQU2N60C N-Channel QFET® MOSFET 600 V, 1.9 A, 4.7 Ω Features • 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V, ID = 0.95 A • Low Gate Charge (Typ. 8.5 nC) • Low Crss ( Typ. 4.3 pF) • 100% Avalanche Tested • RoHS Compliant Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Absolute Maximum Ratings Thermal Characteristics * When mounted on the minimum pad size recommended (PCB Mount) ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ! ! ! ! ! ! ! ! ! ! ! ! ◀ ◀ ◀ ◀ ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ! ! ! ! ! ! ! ! ! ! ! ! ◀ ◀ ◀ ◀ S D G I-PAK D-PAK Symbol Parameter FQD2N60C / FQU2N60C Unit VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25°C) 1.9 A - Continuous (TC = 100°C) 1.14 A IDM Drain Current - Pulsed (Note 1) 7.6 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 120 mJ IAR Avalanche Current (Note 1) 1.9 A EAR Repetitive Avalanche Energy (Note 1) 4.4 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TA = 25°C)* 2.5 W Power Dissipation (TC = 25°C) 44 W - Derate above 25°C 0.35 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter FQD2N60C / FQU2N60C Unit RθJC Thermal Resistance, Junction-to-Case , Max. 2.87 °C/W RθJA Thermal Resistance, Junction-to-Ambient* 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient , Max. 110 °C/W April 2013 G S D G D S |
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