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BDX33C Scheda tecnica(PDF) 1 Page - Comset Semiconductor |
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BDX33C Scheda tecnica(HTML) 1 Page - Comset Semiconductor |
1 / 4 page NPN BDX33 – BDX33A – BDX33B – BDX33C 23/10/2012 COMSET SEMICONDUCTORS 1/4 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are the BDX34A, BDX34B and BDX34C respectively. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage IB=0 BDX33 45 V BDX33A 60 BDX33B 80 BDX33C 100 VCBO Collector-Base Voltage IE=0 BDX33 45 V BDX33A 60 BDX33B 80 BDX33C 100 IC Collector Current IC(RMS) 10 A ICM 15 IB Base Current 0.25 A PT Power Dissipation @ TC = 25° 70 W TJ Junction Temperature -65 to +150 °C TS Storage Temperature THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-C Thermal Resistance, Junction to Case 1.78 °C/W |
Codice articolo simile - BDX33C |
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