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BZX79-C11 Scheda tecnica(PDF) 7 Page - NXP Semiconductors |
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BZX79-C11 Scheda tecnica(HTML) 7 Page - NXP Semiconductors |
7 / 10 page 2002 Feb 27 7 NXP Semiconductors Product data sheet Voltage regulator diodes BZX79 series Fig.3 Maximum permissible non-repetitive peak reverse power dissipation versus duration. handbook, halfpage MBG801 103 1 duration (ms) PZSM (W) 10 102 10−1 10 1 (1) (2) (1) Tj = 25 °C (prior to surge). (2) Tj = 150 °C (prior to surge). Fig.4 Typical forward current as a function of forward voltage. handbook, halfpage 0.6 1 300 100 0 200 MBG781 0.8 VF (V) IF (mA) Tj = 25 °C. Fig.5 Temperature coefficient as a function of working current; typical values. handbook, halfpage 060 0 −2 −3 −1 MBG783 20 40 IZ (mA) SZ (mV/K) 4V3 3V9 3V6 3V0 2V4 2V7 3V3 BZX79-B/C2V4 to BZX79-B/C4V3. Tj = 25 to 150 °C. Fig.6 Temperature coefficient as a function of working current; typical values. handbook, halfpage 020 16 10 0 −5 5 MBG782 48 12 IZ (mA) SZ (mV/K) 4V7 12 11 10 9V1 8V2 7V5 6V8 6V2 5V6 5V1 BZX79-B/C4V7 to BZX79-B/C12. Tj = 25 to 150 °C. |
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