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KA5M0280R Scheda tecnica(PDF) 3 Page - Fairchild Semiconductor |
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KA5M0280R Scheda tecnica(HTML) 3 Page - Fairchild Semiconductor |
3 / 14 page KA5X02XX-SERIES 3 Electrical Characteristics (SFET Part) (Ta=25 °C unless otherwise specified) Note: 1. Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2% 2. Parameter Symbol Condition Min. Typ. Max. Unit KA5x0265xRx Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=50 µA 650 - - V Zero Gate Voltage Drain Current IDSS VDS=Max. Rating, VGS=0V - - 50 µA VDS=0.8Max. Rating, VGS=0V, TC=125 °C - - 200 µA Static Drain-Source on Resistance (Note) RDS(ON) VGS=10V, ID=0.5A - 5.0 6.0 Ω Forward Transconductance (Note) gfs VDS=50V, ID=0.5A 1.5 2.5 - S Input Capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 550 - pF Output Capacitance Coss - 38 - Reverse Transfer Capacitance Crss - 17 - Turn on Delay Time td(on) VDD=0.5B VDSS, ID=1.0A (MOSFET switching time is essentially independent of operating temperature) -20- nS Rise Time tr - 15 - Turn Off Delay Time td(off) - 55 - Fall Time tf - 25 - Total Gate Charge (Gate-Source+Gate-Drain) Qg VGS=10V, ID=1.0A, VDS=0.5B VDSS (MOSFET switching time is essentially independent of operating temperature) -- 35 nC Gate-Source Charge Qgs - 3 - Gate-Drain (Miller) Charge Qgd - 12 - KA5x0280R Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=50 µA 800 - - V Zero Gate Voltage Drain Current IDSS VDS=Max. Rating, VGS=0V - - 50 µA VDS=0.8Max. Rating, VGS=0V, TC=125 °C - - 200 µA Static Drain-Source on Resistance (Note) RDS(ON) VGS=10V, ID=0.5A - 5.6 7.0 Ω Forward Transconductance (Note) gfs VDS=50V, ID=0.5A 1.5 2.5 - S Input Capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 250 - pF Output Capacitance Coss - 52 - Reverse Transfer Capacitance Crss - 25 - Turn on Delay Time td(on) VDD=0.5B VDSS, ID=1.0A (MOSFET switching time is essentially independent of operating temperature) -21 - nS Rise Time tr - 28 - Turn Off Delay Time td(off) - 77 - Fall Time tf - 24 - Total Gate Charge (Gate-Source+Gate-Drain) Qg VGS=10V, ID=1.0A, VDS=0.5B VDSS (MOSFET switching time is essentially independent of operating temperature) -- 60 nC Gate-Source Charge Qgs - 15 - Gate-Drain (Miller) Charge Qgd - 20 - S 1 R ---- = |
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