NPN BD131

18/10/2012

COMSET SEMICONDUCTORS

1 | 2

SILICON PLANAR EPITAXIAL POWER TRANSISTORS

The BD131are NPN transistors mounted in Jedec TO-126 plastic package.

Medium power applications.

PNP complements are BD132

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

Collector-Emitter Voltage

45

V

Collector-Base Voltage

45

V

Emitter-Base Voltage

4

V

Collector Current

3

A

6

Base current (peak value)

0.5

A

Reverse base current (peak value)

0.5

Total power Dissipation

15

W

Junction Temperature

150

°C

Storage Temperature

-65 to +150

°C

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

Thermal Resistance, Junction to mouting base

6

K/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

Collector cut-off current

-

-

5

µA

-

-

500

Emitter cut-offcurrent

-

-

5

µA

Collector-Emitter saturation

Voltage

-

-

0.3

V

-

-

1.2

Base-Emitter saturation

Voltage

-

-

0.7

V

-

-

1,5

DC Current Gain

40

-

-

20

-

-