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KA5M0365RN Scheda tecnica(PDF) 7 Page - Fairchild Semiconductor |
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KA5M0365RN Scheda tecnica(HTML) 7 Page - Fairchild Semiconductor |
7 / 20 page KA5X03XX-SERIES 7 Typical Performance Characteristics(SenseFET part) (KA5H0365R, KA5M0365R, KA5L0365R) 110 0.1 1 10 @Notes: 1. 300 µ s PulseTest 2. T C = 25 oC V GS Top: 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V Bottom:4.5V V DS, Drain-Source Voltage [V] 2468 10 0.1 1 10 @Notes: 1. V DS = 30V 2. 300 µsPulseTest -25 oC 25 oC 150 oC V GS, Gate-Source Voltage [V] 01234 5 0 1 2 3 4 5 6 7 @Note : Tj=25℃ Vgs=10V Vgs=20V I D,Drain Current [A] 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 @Notes: 1. VGS=0V 2. 300 µsPulseTest 25 oC 150 oC V SD, Source-Drain Voltage [V] 10 0 10 1 0 100 200 300 400 500 600 700 C rss C oss C iss C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd V DS, Drain-Source Voltage [V] 0 5 10 15 20 25 0 2 4 6 8 10 V DS=520V V DS=320V V DS=130V @Note: I D=3.0A Q G,Total Gate Charge [nC] Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance vs. Drain Current Figure 4. Source-Drain Diode Forward Voltage Figure 5. Capacitance vs. Drain-Source Voltage Figure 6. Gate Charge vs. Gate-Source Voltage |
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