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KA5H0165RVN Scheda tecnica(PDF) 3 Page - Fairchild Semiconductor |
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KA5H0165RVN Scheda tecnica(HTML) 3 Page - Fairchild Semiconductor |
3 / 12 page KA5X0165RXX-SERIES 3 Electrical Characteristics (SFET Part) (Ta=25 °C unless otherwise specified) Note: 1. Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2% 2. Parameter Symbol Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=50 µA 650 - - V Zero Gate Voltage Drain Current IDSS VDS=Max. Rating, VGS=0V - - 50 µA VDS=0.8Max. Rating, VGS=0V, TC=125 °C - - 200 µA Static Drain-Source on Resistance (Note) RDS(ON) VGS=10V, ID=0.5A - 8 10 Ω Forward Transconductance (Note) gfs VDS=50V, ID=0.5A 0.5 - - S Input Capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 250 - pF Output Capacitance Coss - 25 - Reverse Transfer Capacitance Crss - 10 - Turn on Delay Time td(on) VDD=0.5B VDSS, ID=1.0A (MOSFET switching time is essentially independent of operating temperature) -12 - nS Rise Time tr - 4 - Turn Off Delay Time td(off) - 30 - Fall Time tf - 10 - Total Gate Charge (Gate-Source+Gate-Drain) Qg VGS=10V, ID=1.0A, VDS=0.5B VDSS (MOSFET switching time is essentially independent of operating temperature) -- 21 nC Gate-Source Charge Qgs - 3 - Gate-Drain (Miller) Charge Qgd - 9 - S 1 R ---- = |
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