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KA3S0765R-TU Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
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KA3S0765R-TU Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
2 / 14 page KA3S0765R/KA3S0765RF 2 Absolute Maximum Ratings Notes: 1. Tj=25 °C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L=24mH, VDD=50V, RG=25 Ω, starting Tj=25 °C Characteristic Symbol Value Unit Maximum drain voltage (1) VD,MAX 650 V Drain-gate voltage (RGS=1M Ω) VDGR 650 V Gate-source (GND) Voltage VGS ±30 V Drain current pulsed (2) IDM 28.0 ADC Avalanche current IAS 20 A Continuous drain current (TC=25 °C) ID 7.0 ADC Continuous drain current (TC=100 °C) ID 5.6 ADC Maximum supply voltage VCC,MAX 30 V Input voltage range VFB −0.3 to VSD V Total power dissipation PD (watt H/S) 140 W Derating 1.11 W/ °C Operating ambient temperature TA −25 to +85 °C Storage temperature TSTG −55 to +150 °C |
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