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2N3020 Scheda tecnica(PDF) 2 Page - Comset Semiconductor |
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2N3020 Scheda tecnica(HTML) 2 Page - Comset Semiconductor |
2 / 4 page NPN 2N3019 – 2N3020 16/10/2012 COMSET SEMICONDUCTORS 2/4 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit ICBO Collector Cutoff Current VCB =950 V IE =0 2N3019 - - 10 nA 2N3020 VCB =90 V, IE =0 Tj =150°C 2N3019 - - 10 µA 2N3020 IEBO Emitter Cutoff Current VEB =5 V IC =0 2N3019 - - 10 nA 2N3020 VCEO Collector Emitter Breakdown Voltage IC =10 mA IB =0 2N3019 80 - - V 2N3020 VCBO Collector Base Breakdown Voltage IC =100 µA IE =0 2N3019 140 - - V 2N3020 VEBO Emitter Base Breakdown Voltage IE =100 µA IC =0 2N3019 7 - - V 2N3020 hFE DC Current Gain (*) IC =0.1 mA VCE =10 V 2N3019 50 - - - 2N3020 30 - 100 IC =10 mA VCE =10 V 2N3019 90 - - 2N3020 40 - 120 IC =150 mA VCE =10 V 2N3019 100 - 300 2N3020 40 - 120 IC =500 mA VCE =10 V 2N3019 50 - - 2N3020 30 - 100 IC =1 A VCE =10 V 2N3019 15 - - 2N3020 IC =150 mA VCE =10 V Tamb = -55°C 2N3019 40 - - VCE(SAT) Collector-Emitter saturation Voltage (*) IC =150 mA IB =15 mA 2N3019 - - 0.2 V 2N3020 IC =500 mA IB =50 mA 2N3019 - - 0.5 2N3020 VBE(SAT) Base-Emitter saturation Voltage (*) IC =150 mA IB =15 mA 2N3019 - - 1.1 |
Codice articolo simile - 2N3020 |
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Descrizione simile - 2N3020 |
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