2N3019_12 datasheet(2/4 Pages) COMSET

Il numero della parte	2N3019

Spiegazioni elettronici	SILICON PLANAR EPITAXIAL TRANSISTORS

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Produttore elettronici	COMSET [Comset Semiconductor]

Homepage	http://comset.halfin.com

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2 / 4 page

NPN 2N3019 – 2N3020

16/10/2012

COMSET SEMICONDUCTORS

2/4

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

ICBO

Collector Cutoff Current

VCB =950 V

IE =0

2N3019

-

10

nA

2N3020

VCB =90 V, IE =0

Tj =150°C

2N3019

-

10

µA

2N3020

IEBO

Emitter Cutoff Current

VEB =5 V

IC =0

2N3019

-

10

nA

2N3020

VCEO

Collector Emitter Breakdown

Voltage

IC =10 mA

IB =0

2N3019

80

-

V

2N3020

VCBO

Collector Base Breakdown

Voltage

IC =100 µA

IE =0

2N3019

140

-

V

2N3020

VEBO

Emitter Base Breakdown

Voltage

IE =100 µA

IC =0

2N3019

7

-

V

2N3020

hFE

DC Current Gain (*)

IC =0.1 mA

VCE =10 V

2N3019

50

-

2N3020

30

-

100

IC =10 mA

VCE =10 V

2N3019

90

-

2N3020

40

-

120

IC =150 mA

VCE =10 V

2N3019

100

-

300

2N3020

40

-

120

IC =500 mA

VCE =10 V

2N3019

50

-

2N3020

30

-

100

IC =1 A

VCE =10 V

2N3019

15

-

2N3020

IC =150 mA

VCE =10 V

Tamb = -55°C

2N3019

40

-

VCE(SAT)

Collector-Emitter saturation

Voltage (*)

IC =150 mA

IB =15 mA

2N3019

-

0.2

V

2N3020

IC =500 mA

IB =50 mA

2N3019

-

0.5

2N3020

VBE(SAT)

Base-Emitter saturation

Voltage (*)

IC =150 mA

IB =15 mA

2N3019

-

1.1

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