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KA1M0365 Scheda tecnica(PDF) 3 Page - Fairchild Semiconductor |
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KA1M0365 Scheda tecnica(HTML) 3 Page - Fairchild Semiconductor |
3 / 10 page KA1L0365R/KA1M0365R/KA1H0365R 3 Electrical Characteristics (SFET part) (Ta=25 °C unless otherwise specified) Note: 1. Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2% 2. Parameter Symbol Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=50 µA 650 - - V Zero Gate Voltage Drain Current IDSS VDS=Max., Rating, VGS=0V -- 50 µA VDS=0.8Max., Rating, VGS=0V, TC=125 °C - - 200 µA Static Drain-Source on Resistance (Note) RDS(ON) VGS=10V, ID=1.5A - 3.6 4.5 Ω Forward Transconductance (Note) gfs VDS=50V, ID=1.5A 2.0 - - S Input Capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 720 - pF Output Capacitance Coss - 40 - Reverse Transfer Capacitance Crss - 40 - Turn on Delay Time td(on) VDD=0.5BVDSS, ID=3.0A (MOSFET switching time are essentially independent of operating temperature) - 150 - nS Rise Time tr - 100 - Turn Off Delay Time td(off) - 150 - Fall Time tf - 42 - Total Gate Charge (Gate-Source+Gate-Drain) Qg VGS=10V, ID=3.0A, VDS=0.5BVDSS (MOSFET switching time are essentially independent of operating temperature) -- 34 nC Gate-Source Charge Qgs - 7.3 - Gate-Drain (Miller) Charge Qgd - 13.3 - S 1 R ---- = |
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