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IRF7907PBF Scheda tecnica(PDF) 1 Page - International Rectifier |
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IRF7907PBF Scheda tecnica(HTML) 1 Page - International Rectifier |
1 / 10 page www.irf.com 1 07/09/08 IRF7907PbF HEXFET® Power MOSFET SO-8 Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l Improved Body Diode Reverse Recovery l 100% Tested for RG l Lead-Free Applications l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoles and Set-Top Box VDSS ID 30V Q1 16.4m :@VGS = 10V 9.1A Q2 11.8m :@VGS = 10V 11A RDS(on) max Absolute Maximum Ratings Parameter Q1 Max. Q2 Max. Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 9.1 11 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 7.3 8.8 A IDM Pulsed Drain Current c 76 85 PD @TA = 25°C Power Dissipation 2.0 2.0 W PD @TA = 70°C Power Dissipation 1.3 1.3 Linear Derating Factor 0.016 0.016 W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Thermal Resistance Parameter Q1 Max. Q2 Max. Units RθJL Junction-to-Drain Lead g 42 42 °C/W RθJA Junction-to-Ambient fg 62.5 62.5 ± 20 30 -55 to + 150 PD - 97066A |
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