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CSD18537NQ5A Scheda tecnica(PDF) 5 Page - Texas Instruments

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Il numero della parte CSD18537NQ5A
Spiegazioni elettronici  60-V N-Channel NexFET Power MOSFETs
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Produttore elettronici  TI [Texas Instruments]
Homepage  http://www.ti.com
Logo TI - Texas Instruments

CSD18537NQ5A Scheda tecnica(HTML) 5 Page - Texas Instruments

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0
10
20
30
40
50
60
70
80
−50
−25
0
25
50
75
100
125
150
175
TC - Case Temperature (ºC)
G001
0.01
0.1
1
10
100
1000
5000
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
1ms
10ms
100ms
1s
DC
Single Pulse
Typical RthetaJA = 100ºC/W
G001
10
100
0.01
0.1
1
TAV - Time in Avalanche (mS)
TC = 25ºC
TC = 125ºC
G001
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
−75
−25
25
75
125
175
TC - Case Temperature (ºC)
VGS = 6V
VGS = 10V
ID =12A
G001
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
VSD − Source-to-Drain Voltage (V)
TC = 25°C
TC = 125°C
G001
CSD18537NQ5A
www.ti.com
SLPS391 – JUNE 2013
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 8. Normalized On-State Resistance vs. Temperature
Figure 9. Typical Diode Forward Voltage
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 10. Maximum Safe Operating Area
Figure 11. Single Pulse Unclamped Inductive Switching
TEXT ADDED FOR SPACING
Figure 12. Maximum Drain Current vs. Temperature
Copyright © 2013, Texas Instruments Incorporated
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