IRF7331PBF_08 datasheet(4/9 Pages) IRF

Il numero della parte	IRF7331PBF

Spiegazioni elettronici	Ultra Low On-Resistance Dual N-Channel MOSFET

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Produttore elettronici	IRF [International Rectifier]

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IRF7331PbF

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Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

0.1

1

10

100

0.2

0.4

0.6

0.8

1.0

1.2

V

,Source-to-Drain Voltage (V)

SD

V

= 0 V

GS

T = 25 C

J

°

T = 150 C

J

°

0

4

8

12

16

20

0

2

4

6

8

Q , Total Gate Charge (nC)

G

I =

D

7.0A

V

= 10V

DS

1

10

100

VDS, Drain-to-Source Voltage (V)

0

400

800

1200

1600

2000

2400

Coss

Crss

Ciss

VGS = 0V,

f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = Cgd

Coss = Cds+ Cgd

0.1

1

10

100

VDS , Drain-toSource Voltage (V)

0.1

1

10

100

Tc = 25°C

Tj = 150°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY R DS(on)

100µsec

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