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IRFP350A Scheda tecnica(PDF) 3 Page - Fairchild Semiconductor |
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IRFP350A Scheda tecnica(HTML) 3 Page - Fairchild Semiconductor |
3 / 7 page IRFP350A 10 -1 10 0 10 1 10 -1 10 0 10 1 @ Notes : 1. 250 µs Pulse Test 2. T C = 25 oC V GS Top : 15V 10 V 8.0 V 7.0 V 6.0 V 5.5V 5.0 V Bottom : 4.5V V DS , Drain-Source Voltage [V] 24 68 10 10 -1 10 0 10 1 25 oC 150 oC - 55 oC @ Notes : 1. V GS = 0 V 2. V DS = 50 V 3. 250 µs Pulse Test V GS , Gate-Source Voltage [V] 0 10 2030 405060 70 0.00 0.15 0.30 0.45 0.60 @ Note : T J = 25 oC V GS = 20 V V GS = 10 V I D , Drain Current [A] 0.20.40.60.81.01.21.41.61.8 10 -1 10 0 10 1 150 oC 25 oC @ Notes : 1. V GS = 0 V 2. 250 µsPulse Test V SD , Source-Drain Voltage [V] 10 0 10 1 0 1000 2000 3000 4000 C iss= Cgs+ Cgd ( Cds= shorted ) C oss = C ds + C gd C rss = C gd @ Notes : 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS , Drain-Source Voltage [V] 0 204060 80 100120 0 5 10 V DS = 320 V V DS = 200 V V DS = 80 V @ Notes : I D = 17.0 A Q G , Total Gate Charge [nC] 1&+$11(/ 32:(5 026)(7 Fig 1. Output Characteristics Fig 2. Transfer Characteristics Fig 6. Gate Charge vs. Gate-Source Voltage Fig 5. Capacitance vs. Drain-Source Voltage Fig 4. Source-Drain Diode Forward Voltage Fig 3. On-Resistance vs. Drain Current |
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