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IRLBA1304P Scheda tecnica(PDF) 2 Page - International Rectifier

Il numero della parte IRLBA1304P
Spiegazioni elettronici  HEXFET짰 Power MOSFET
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Produttore elettronici  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRLBA1304P Scheda tecnica(HTML) 2 Page - International Rectifier

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IRLBA1304
2
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 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ƒ I
SD ≤ 110A, di/dt ≤ 170A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Notes:
‚ Starting T
J = 25°C, L = 230µH
RG = 25Ω, IAS = 100A. (See Figure 12)
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 110A, VGS = 0V
„
trr
Reverse Recovery Time
–––
100
150
ns
TJ = 25°C, IF = 110A
Qrr
Reverse RecoveryCharge
–––
250
380
nC
di/dt = 100A/µs
„
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
185*
740
A
Parameter
Min.
Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.043 –––
V/°C
Reference to 25°C, ID = 1mA
–––
––– 0.0040
VGS = 10V, ID = 110A
„
–––
––– 0.0065
VGS = 4.5V, ID = 93
„
VGS(th)
Gate Threshold Voltage
1.0
–––
–––
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
120
–––
–––
S
VDS = 25V, ID = 110A
–––
–––
25
µA
VDS = 40V, VGS = 0V
–––
–––
250
VDS = 32V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 16V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -16V
Qg
Total Gate Charge
–––
–––
140
ID = 110A
Qgs
Gate-to-Source Charge
–––
–––
39
nC
VDS = 32V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
79
VGS = 4.5V, See Fig. 6 and 13
„
td(on)
Turn-On Delay Time
–––
21
–––
VDD = 20V
tr
Rise Time
–––
350
–––
ID = 110A
td(off)
Turn-Off Delay Time
–––
45
–––
RG = 0.9Ω
tf
Fall Time
–––
103
–––
RD = 0.18Ω,See Fig. 10
„
Between lead,
–––
–––
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
7660 –––
VGS = 0V
Coss
Output Capacitance
–––
2150 –––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
460
–––
ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
nH
IGSS
S
D
G
LS
Internal Source Inductance
–––
5.0
–––
RDS(on)
Static Drain-to-Source On-Resistance
LD
Internal Drain Inductance
2.0
IDSS
Drain-to-Source Leakage Current


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