Si4542DY-T1-E3 datasheet(1/10 Pages) VISHAY

Il numero della parte	Si4542DY-T1-E3

Spiegazioni elettronici	N-and P-Channel 30-V (D-S) MOSFET

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Produttore elettronici	VISHAY [Vishay Siliconix]

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Vishay Siliconix

Si4542DY

Document Number: 70666

S09-0868-Rev. G, 18-May-09

www.vishay.com

1

N- and P-Channel 30-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•100 % Rg Tested

•

Compliant to RoHS Directive 2002/95/EC

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

N-Channel

30

0.025 at VGS = 10 V

6.9

0.035 at VGS = 4.5 V

5.8

P-Channel

- 30

0.032 at VGS = - 10 V

- 6.1

0.045 at VGS = - 4.5 V

- 5.1

S1

D1

G1

D1

S2

D2

G2

D2

SO-8

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4542DY

-T1-E3 (Lead (Pb)-free)

Si4542DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

D1

G1

S1

N-Channel MOSFET

S2

G2

D2

P-Channel MOSFET

Notes:

a. Surface Mounted on FR4 board, t

≤ 10 s.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

N-Channel

P-Channel

Unit

Drain-Source Voltage

VDS

30

- 30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

a

TA = 25 °C

ID

6.9

- 6.1

A

TA = 70 °C

5.5

- 4.9

Pulsed Drain Current

IDM

40

- 40

Continuous Source Current (Diode Conduction)a

IS

1.7

- 1.7

Maximum Power Dissipationa

TA = 25 °C

PD

2.0

W

TA = 70 °C

1.3

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

N- or P-Channel

Unit

Maximum Junction-to-Ambienta

RthJA

62.5

°C/W

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