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Si4542DY-T1-E3 Scheda tecnica(PDF) 1 Page - Vishay Siliconix |
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Si4542DY-T1-E3 Scheda tecnica(HTML) 1 Page - Vishay Siliconix |
1 / 10 page Vishay Siliconix Si4542DY Document Number: 70666 S09-0868-Rev. G, 18-May-09 www.vishay.com 1 N- and P-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET •100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) N-Channel 30 0.025 at VGS = 10 V 6.9 0.035 at VGS = 4.5 V 5.8 P-Channel - 30 0.032 at VGS = - 10 V - 6.1 0.045 at VGS = - 4.5 V - 5.1 S1 D1 G1 D1 S2 D2 G2 D2 SO-8 5 6 7 8 Top View 2 3 4 1 Ordering Information: Si4542DY -T1-E3 (Lead (Pb)-free) Si4542DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 G1 S1 N-Channel MOSFET S2 G2 D2 P-Channel MOSFET Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 30 - 30 V Gate-Source Voltage VGS ± 20 ± 20 Continuous Drain Current (TJ = 150 °C) a TA = 25 °C ID 6.9 - 6.1 A TA = 70 °C 5.5 - 4.9 Pulsed Drain Current IDM 40 - 40 Continuous Source Current (Diode Conduction)a IS 1.7 - 1.7 Maximum Power Dissipationa TA = 25 °C PD 2.0 W TA = 70 °C 1.3 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol N- or P-Channel Unit Maximum Junction-to-Ambienta RthJA 62.5 °C/W |
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