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TYN612T Scheda tecnica(PDF) 1 Page - Thinki Semiconductor Co., Ltd. |
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TYN612T Scheda tecnica(HTML) 1 Page - Thinki Semiconductor Co., Ltd. |
1 / 6 page Applications: Motor control Industrial and domestic lighting Heating Static switching Blocking voltage to 600 V On-state RMS current to 12A Ultra low gate trigger current Features Unit SYMBOL PARAMETER Value VDRM 600 V ITRMS 12 A ITSM 140 A Repetitive peak off-state voltages RMS on-state current Non-repetitive surge peak on-state current SYMBOL PARAMETER MAX UNIT Rth( j-c) Rth( j-a) Junction to case(DC) Junction to ambient CONDITIONS TYP MIN /W /W - - - - 60 1.3 Description Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. Pin Description 1 2 3 Cathode Anode Gate Simplified outline 123 TO-220 Symbol a g k ® TYN612T Pb Free Plating Product TYN612T SENSITIVE & STANDARD(12A SCRs) Pb © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 1/6 |
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