BCX56-10 datasheet(10/15 Pages) NXP

Il numero della parte	BCX56-10

Spiegazioni elettronici	80 V, 1 A NPN medium power transistors

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Produttore elettronici	NXP [NXP Semiconductors]

Homepage	http://www.nxp.com

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10 / 15 page

BC639_BCP56_BCX56_8

Product data sheet

Rev. 08 — 22 June 2007

10 of 15

NXP Semiconductors

BC639; BCP56; BCX56

80 V, 1 A NPN medium power transistors

VCE =2V

(1) Tamb = 150 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

Tamb =25 °C

Fig 10. DC current gain as a function of collector

current; typical values

Fig 11. Collector current as a function of

collector-emitter voltage; typical values

VCE =2V

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 150 °C

IC/IB =10

(1) Tamb = 150 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

Fig 12. Base-emitter voltage as a function of collector

current; typical values

Fig 13. Collector-emitter saturation voltage as a

function of collector current; typical values

006aaa080

100

200

300

hFE

0

IC (mA)

10−1

104

103

1102

10

(1)

(2)

(3)

VCE (V)

0

2.0

1.6

0.8

1.2

0.4

006aaa084

0.8

0.4

1.2

1.6

IC

(A)

0

25

20

15

10

5

IB (mA) = 50

45

40

35

30

006aaa081

0.4

0.8

1.2

VBE

(V)

0

IC (mA)

10−1

104

103

1102

10

(1)

(2)

(3)

006aaa082

10−1

1

VCEsat

(V)

10−2

IC (mA)

10−1

104

103

1102

10

(1)

(2)

(3)

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