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STD155N3LH6 Scheda tecnica(PDF) 7 Page - STMicroelectronics |
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STD155N3LH6 Scheda tecnica(HTML) 7 Page - STMicroelectronics |
7 / 18 page STB155N3LH6, STD155N3LH6 Electrical characteristics Doc ID 17893 Rev 3 7/18 Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics VGS 6 4 2 0 0 20 Qg(nC) (V) 80 8 40 60 10 VDD=15V ID=80A 12 AM09106v1 C 1000 100 0 10 VDS(V) (pF) 5 15 Ciss Coss Crss 20 25 AM09107v1 VGS(th) 0.6 0.4 0.2 0 -75 TJ(°C) (norm) -25 0.8 75 25 125 1.0 1.2 AM09108v1 RDS(on) 1.0 0.8 0.6 0.4 -75 TJ(°C) (norm) -25 75 25 125 1.6 1.4 1.2 2.0 1.8 VGS=10V ID=40A AM09109v1 VSD 0 20 ISD(A) (V) 10 50 30 40 0.4 0.5 0.6 0.7 0.8 0.9 1.0 TJ=-55°C TJ=175°C TJ=25°C 80 60 70 AM09110v1 |
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