STFI4N62K3 datasheet(1/19 Pages) STMICROELECTRONICS

Il numero della parte	STFI4N62K3

Spiegazioni elettronici	N-channel 620 V, 1.7 廓 typ., 3.8 A SuperMESH3 Power MOSFET

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This is information on a product in full production.

August 2012

Doc ID 17548 Rev 4

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STF4N62K3, STFI4N62K3, STI4N62K3,

STP4N62K3, STU4N62K3

N-channel 620 V, 1.7

Ω typ., 3.8 A SuperMESH3™ Power MOSFET

in TO-220FP, I²PAKFP, I²PAK, TO-220 and IPAK packages

Datasheet — production data

Features

■ 100% avalanche tested

■ Extremely high dv/dt capability

■ Gate charge minimized

■ Very low intrinsic capacitance

■ Improved diode reverse recovery

characteristics

■ Zener-protected

Applications

■ Switching applications

Description

These SuperMESH3™ Power MOSFETs are the

result of improvements applied to

STMicroelectronics’ SuperMESH™ technology,

combined with a new optimized vertical structure.

These devices boast an extremely low on-

resistance, superior dynamic performance and

high avalanche capability, rendering them suitable

for the most demanding applications.

Figure 1.

Internal schematic diagram

Order codes

VDSS RDS(on) max

ID

PTOT

STF4N62K3

STFI4N62K3

STI4N62K3

STP4N62K3

STU4N62K3

620 V

< 2

Ω

3.8 A

25 W

70 W

1

2

3

TO-220FP

3

2

1

TAB

IPAK

I²PAKFP

1

2

3

I²PAK

1

2

3

TAB

1

2

3

TAB

TO-220

D(2,TAB)

G(1)

S(3)

AM01476v1

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STF4N62K3

STFI4N62K3

STI4N62K3

STP4N62K3

STU4N62K3

4N62K3

TO-220FP

I²PAKFP

I²PAK

TO-220

IPAK

Tube

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