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FQD10N20C Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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FQD10N20C Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
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1 / 9 page  FQD10N20C / FQU10N20C N-Channel QFET® MOSFET 200 V, 7.8 A, 360 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 7.8 A, 200 V, RDS(on) = 360 mΩ (Max.)@ VGS = 10 V, ID = 3.9 A • Low Gate Charge (Typ. 20 nC) • Low Crss (Typ. 40.5 pF) • 100% Avalanche Tested Absolute Maximum Ratings TC = 25°C unless otherwise noted Thermal Characteristics * When mounted on the minimum pad size recommended (PCB Mount) Symbol Parameter FQD10N20C / FQU10N20C Unit VDSS Drain-Source Voltage 200 V ID Drain Current - Continuous (TC = 25°C) 7.8 A - Continuous (TC = 100°C) 5.0 A IDM Drain Current - Pulsed (Note 1) 31.2 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 210 mJ IAR Avalanche Current (Note 1) 7.8 A EAR Repetitive Avalanche Energy (Note 1) 5.0 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns PD Power Dissipation (TC = 25°C) 50 W - Derate above 25°C 0.4 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter FQD10N20C / FQU10N20C Unit RθJC Thermal Resistance, Junction-to-Case, Max. 2.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient* 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient, Max. 110 °C/W ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ! ! ! ! ! ! ! ! ! ! ! ! ◀ ◀ ◀ ◀ ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ! ! ! ! ! ! ! ! ! ! ! ! ◀ ◀ ◀ ◀ S D G ©2009 Fairchild Semiconductor Corporation FQD10N20C / FQU10N20C Rev. C1 www.fairchildsemi.com July 2013 I-PAK G D S (TO251) (TO252) D-PAK G S D |
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