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FSB6726 Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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FSB6726 Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
1 / 3 page FSB6726 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A. Sourced from Process 77. Absolute Maximum Ratings* TA = 25°C unless otherwise noted °C -55 to +150 Operating and Storage Junction Temperature Range TJ, Tstg A 1.5 Collector Current - Continuous IC V 5 Emitter-Base Voltage VEBO V 40 Collector-Base Voltage VCBO V 30 Collector-Emitter Voltage VCEO Units FSB660/FSB660A Parameter Symbol *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted °C/W 250 Thermal Resistance, Junction to Ambient RθJA mW 500 Total Device Dissipation PD FSB6726 Units Max Characteristic Symbol Page 1 of 2 fsb6726lwp Pr77 RevA SuperSOT TM-3 © 1999 Fairchild Semiconductor Corporation C E B |
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