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Si5326B-C-GM Scheda tecnica(PDF) 9 Page - Silicon Laboratories |
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Si5326B-C-GM Scheda tecnica(HTML) 9 Page - Silicon Laboratories |
9 / 72 page Si5326 Rev. 1.0 9 Table 3. Microprocessor Control (VDD = 1.8 ± 5%, 2.5 ±10%, or 3.3 V ±10%, TA = –40 to 85 °C) Parameter Symbol Test Condition Min Typ Max Unit I2C Bus Lines (SDA, SCL) Input Voltage Low VILI2C — — 0.25 x VDD V Input Voltage High VIHI2C 0.7 x VDD —VDD V Input Current III2C VIN = 0.1 x VDD to 0.9 x VDD –10 — 10 µA Hysteresis of Schmitt trigger inputs VHYSI2C VDD = 1.8V 0.1 x VDD —— V VDD = 2.5 or 3.3 V 0.05 x VDD —— V Output Voltage Low VOLI2C VDD =1.8 V IO = 3 mA — — 0.2 x VDD V VDD = 2.5 or 3.3 V IO = 3 mA —— 0.4 V |
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