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IRF7503TR Scheda tecnica(PDF) 2 Page - International Rectifier

Il numero della parte IRF7503TR
Spiegazioni elettronici  Generation V Technology
Download  8 Pages
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Produttore elettronici  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRF7503TR Scheda tecnica(HTML) 2 Page - International Rectifier

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IRF7503
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.059 –––
V/°C
Reference to 25°C, ID = 1mA
–––
––– 0.135
VGS = 10V, ID = 1.7A
ƒ
–––
––– 0.222
VGS = 4.5V, ID = 0.85A
ƒ
VGS(th)
Gate Threshold Voltage
1.0
–––
–––
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
1.9
–––
–––
S
VDS = 10V, ID = 0.85A
–––
–––
1.0
VDS = 24V, VGS = 0V
–––
–––
25
VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
-100
VGS = -20V
Gate-to-Source Reverse Leakage
–––
–––
100
VGS = 20V
Qg
Total Gate Charge
–––
7.8
12
ID = 1.7A
Qgs
Gate-to-Source Charge
–––
1.2
1.8
nC
VDS = 24V
Qgd
Gate-to-Drain ("Miller") Charge
–––
2.5
3.8
VGS = 10V, See Fig. 6 and 9
ƒ
td(on)
Turn-On Delay Time
–––
4.7
–––
VDD = 15V
tr
Rise Time
–––
10
–––
ID = 1.7A
td(off)
Turn-Off Delay Time
–––
12
–––
RG = 6.1
tf
Fall Time
–––
5.3
–––
RD = 8.7
Ω, See Fig. 10 ƒ
Ciss
Input Capacitance
–––
210
–––
VGS = 0V
Coss
Output Capacitance
–––
80
–––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
32
–––
ƒ = 1.0MHz, See Fig. 5
µA
nA
ns
IGSS
IDSS
Drain-to-Source Leakage Current
RDS(on)
Static Drain-to-Source On-Resistance
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
‚ ISD ≤ 1.7A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.2
V
TJ = 25°C, IS = 1.7A, VGS = 0V
ƒ
trr
Reverse Recovery Time
–––
40
60
ns
TJ = 25°C, IF = 1.7A
Qrr
Reverse RecoveryCharge
–––
48
72
nC
di/dt = 100A/µs
ƒ
Source-Drain Ratings and Characteristics
A
–––
–––
14
–––
–––
1.25
S
D
G
„ Surface mounted on FR-4 board, t ≤ 10sec.


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