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IRF7413TRPBF Scheda tecnica(PDF) 2 Page - International Rectifier |
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IRF7413TRPBF Scheda tecnica(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRF7413PbF www.irf.com 2 Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ 7.3A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Starting TJ= 25°C, L = 9.8mH RG = 25Ω, IAS =7.3A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board Rθ is measured at TJ approximately 90°C Symbol Parameter Min Typ Max Units V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.034 ––– V/°C ––– ––– 0.011 ––– ––– 0.018 VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V gfs Forward Transconductance 10 ––– ––– S ––– ––– 12 ––– ––– 25 Gate-to-Source Forward Leakage ––– ––– -100 Gate-to-Source Reverse Leakage ––– ––– 100 Qg Total Gate Charge ––– 52 79 Qgs Gate-to-Source Charge ––– 6.1 9.2 nC Qgd Gate-to-Drain ("Miller") Charge ––– 16 23 RG Gate Resistance ––– ––– 3.7 Ω td(on) Turn-On Delay Time ––– 8.6 ––– tr Rise Time ––– 50 ––– td(off) Turn-Off Delay Time ––– 52 ––– ns tf Fall Time ––– 46 ––– Ciss Input Capacitance ––– 1800 ––– Coss Output Capacitance ––– 680 ––– Crss Reverse Transfer Capacitance ––– 240 ––– Symbol Parameter Min. Typ. Max. Units Continuous Source Current (Body Diode) A Pulsed Source Current (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.0 V trr Reverse Recovery Time ––– 74 110 ns Qrr Reverse Recovery Charge ––– 200 300 nC ISM ––– ––– 58 IS IDSS Drain-to-Source Leakage Current µA IGSS pF 3.1 ––– ––– nA Ω VGS = 4.5V, ID = 3.7A f Static Drain-to-Source On-Resistance VGS = 10V, ID = 7.3A f RDS(on) VDS = VGS, ID = 250µA VDS = 30V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C MOSFET symbol VDS = 10V, ID = 3.7A ID = 7.3A VDS = 24V Conditions RG = 2.0Ω, See Fig. 10 f VGS = 0V RG = 6.2 Ω VDS = 25V ƒ = 1.0MHz, See Fig. 5 TJ = 25°C, IS = 7.3A, VGS = 0V e TJ = 25°C, IF = 7.3A di/dt = 100A/µs e showing the integral reverse p-n junction diode. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Source-Drain Ratings and Characteristics VGS = 10V, See Fig. 6 and 9 f VDD = 15V ID = 7.3A VGS = -20V VGS = 20V Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA |
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