STF30N65M5 datasheet(5/22 Pages) STMICROELECTRONICS

Il numero della parte	STF30N65M5

Spiegazioni elettronici	N-channel 650 V, 0.125 廓, 22 A, MDmesh??V Power MOSFET D짼PAK, TO-220FP, I짼PAK, TO-220, TO-247

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

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STB/F/I/P/W30N65M5

Electrical characteristics

Doc ID 15331 Rev 3

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Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

td(off)

tr

tc

tf

Turn-off delay time

Rise time

Cross time

Fall time

VDD = 400 V, ID = 14 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 21)

-

50

8

20

10

-

ns

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

-

22

88

A

VSD

(2)

2.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 22 A, VGS = 0

-

1.5

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 22 A, di/dt = 100 A/µs

VDD = 60 V (see Figure 21)

-

336

6

32

ns

µC

A

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 22 A, di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C

(see Figure 21)

-

395

7

34

ns

µC

A

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