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STF21N65M5 Scheda tecnica(PDF) 8 Page - STMicroelectronics |
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STF21N65M5 Scheda tecnica(HTML) 8 Page - STMicroelectronics |
8 / 22 page Electrical characteristics STB/F/I/P/W21N65M5 8/22 Doc ID 15427 Rev 4 Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature Figure 18. Switching losses vs gate resistance (1) 1. Eon including reverse recovery of a SiC diode. VGS(th) 1.00 0.90 0.80 0.70 -50 0 TJ(°C) (norm) -25 1.10 75 25 50 100 125 ID =250 µA AM05500v1 RDS(on) 1.7 1.5 0.9 0.5 -50 0 TJ(°C) (norm) -25 75 25 50 100 0.7 1.1 1.3 1.9 2.1 125 ID= 8.5 A VGS= 10 V AM05501v1 VSD 0 20 ISD(A) (V) 10 50 30 40 0.4 0.5 0.6 0.7 0.8 0.9 1.0 TJ=-50°C TJ=150°C TJ=25°C AM05502v1 BVDSS -50 0 TJ(°C) (norm) -25 75 25 50 100 0.93 0.95 0.97 0.99 1.01 1.03 1.05 1.07 ID= 1 mA AM05499v1 E 60 40 20 0 0 20 RG( Ω) ( µJ) 10 30 80 100 120 40 ID=11A VDD=400V VGS=10V Eon Eoff 140 160 AM05541v1 |
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